
M2Y1G64CB88A9N / M2Y2G64CB8HA9N
1GB: 128M x 64 / 2GB: 256M x 64
Unbuffered DDR3 SDRAM DIMM
REV 1.0 12
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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Operating, Standby, and Refresh Currents
T
CASE
= 0 °C ~ 85 °C; V
DDQ
= V
DD
= 1.5V ± 0.075V (1GB, 1 Rank, base on 128Mx8 DDR3 SDRAMs)
Operating Current: one bank activate/Precharge
Operating Current: one bank activate/Read/Precharge
Precharge Power-Down Current Fast Exit-MR0 bit A12=0
Precharge Power Down Current Slow Exit-MR0 bit A12=1
Precharge Standby Current
Precharge Quiet Standby current
Active Power-Down Current Always Fast Exit
Operating Current: Burst Write
Operating Current: Burst Read
Self-Refresh Current Normal Temperature Range (0-85C)
All Bank Interleave Read Current
Note: Module IDD was calculated from component IDD. It may differ from the actual measurement.
Operating, Standby, and Refresh Currents
T
CASE
= 0 °C ~ 85 °C; V
DDQ
= V
DD
= 1.5V ± 0.075V (2GB, 2 Ranks, base on 128Mx8 DDR3 SDRAMs)
Operating Current: one bank activate/Precharge
Operating Current: one bank activate/Read/Precharge
Precharge Power-Down Current Fast Exit-MR0 bit A12=0
Precharge Power Down Current Slow Exit-MR0 bit A12=1
Precharge Standby Current
Precharge Quiet Standby current
Active Power-Down Current Always Fast Exit
Operating Current: Burst Write
Operating Current: Burst Read
Self-Refresh Current Normal Temperature Range (0-85C)
All Bank Interleave Read Current
Note: Module IDD was calculated from component IDD. It may differ from the actual measurement.
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