Elixir M2F2G64CB8HA4N-CG Datový list stáhnout pdf (Strana 12)

M2F1G64CB88A4N / M2F2G64CB8HA4N

1GB: 128M x 64 / 2GB: 256M x 64

Unbuffered DDR3 SDRAM DIMM Preliminary

REV 0.1 12

06/2008

NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

Operating, Standby, and Refresh Currents

CASE

= 0 °C ~ 85 °C; V

DDQ

= V

= 1.5V ± 0.075V (1GB, 1 Rank, base on 128Mx8 DDR3 SDRAMs)

Symbol

Parameter/Condition

DDR3-1066

DDR3-1333

DDR3-1600

Unit

I DD0

Operating Current: one bank activate/Precharge

TBD

I DD1

Operating Current: one bank activate/Read/Precharge

TBD

I DD2P(0)

Precharge Power-Down Current Fast Exit-MR0 bit A12=0

TBD

I DD2P(1)

Precharge Power Down Current Slow Exit-MR0 bit A12=1

TBD

I DD2N

Precharge Standby Current

TBD

I DD2Q

Precharge Quiet Standby current

TBD

I DD3P

Active Power-Down Current Always Fast Exit

TBD

I DD3N

Active Standby Current

TBD

I DD4W

Operating Current: Burst Write

TBD

I DD4R

Operating Current: Burst Read

TBD

I DD5B

Burst Refresh Current

TBD

I DD6

Self-Refresh Current Normal Temperature Range (0-85C)

TBD

I DD6ET

Self-Refresh Current Extended Temperature Range (0-95C)

TBD

I DD7

All Bank Interleave Read Current

TBD

Note: Module IDD was calculated from component IDD. It may differ from the actual measurement.